The STPSC10H065 is a high-performance 650 V power Schottky silicon carbide diode optimized for PFC and hard switching applications. Manufactured with a silicon carbide substrate, it provides negligible reverse recovery, minimal ringing, and consistent behavior across temperature ranges. Its high surge current capability, insulated packages like TO-220AC, DPAK, and D2PAK, and low capacitance of approximately 7 pF make it ideal for energy-efficient, robust power conversion, and transient phase management in various industrial and consumer devices. It offers exceptional reliability in demanding electrical environments.
Dimension: DPAK package length approx. 5.20–5.40 mm, width 4.95–5.15 mm
Peak repetitive forward current: 8.5 A at 25°C
Recovery charge: 28.5 nc at Vr=400 V
Reverse leakage current: 156 μA at 25°C, 9 mA at 150°C
Buy the STMicroelectronics Series Power Schottky Silicon Carbide Diode: STPSC10H065
Order the STMicroelectronics high-voltage silicon carbide diode online today to enhance your power conversion systems. Designed for PFC and switching circuits, this diode offers excellent surge capability, negligible reverse recovery, low capacitance, and reliable performance across temperature ranges. Its robust construction and insulated packages ensure durability and safety in demanding applications. Purchase now to improve efficiency, reduce losses, and ensure stability in your industrial and consumer electronics projects with our high-quality SiC diode available in convenient tape-and-reel or tube options for fast delivery.
Get STMicroelectronics STPSC10H065 today—built for high voltage, fast switching, and robust power management in industrial and consumer electronics.
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