STMICROELECTRONICS STW50N65DM6 High-Voltage Power MOSFET
The high-voltage N-channel Power MOSFET STW50N65DM6 is designed for demanding switching applications, including high-efficiency bridge topologies and ZVS phase-shift converters. It features a voltage rating of 650 V, very low on-resistance, fast recovery body diode, and high avalanche ruggedness, making it ideal for high-power, high-speed switching. It is provided in a TO-247 package, with specified electrical and thermal characteristics, including low gate charge and high dv/dt ruggedness, ensuring reliable operation in industrial and power conversion systems.
STMICROELECTRONICS STW50N65DM6 High-Voltage Power MOSFET Specifications:
Voltage Rating: 650 V
Drain-Source On-Resistance: 74 mΩ
Drain Current (continuous): 33 A at 25°C
Pulsed Drain Current: 120 A
Power Dissipation: 250 W at 25°C
Gate-Source Voltage: ±25 V
Storage Temperature Range: -55°C to 150°C
Operating Junction Temperature: -55°C to 150°C
Thermal Resistance Junction-Case: 0.5 °C/W
Thermal Resistance Junction-Ambient: 50 °C/W
Reverse Recovery Time: 130 ns
Avalanche Current: 9 A
Gate Capacitance: 2300 pF
Output Capacitance: 165 pF
Charge (Gate-Source): 145 nc
Package: TO-247
Buy the STMicroelectronics Series DM6 Power MOSFET: STW50N65DM6
Purchase the STW50N65DM6 high-voltage Power MOSFET online today to ensure optimal performance in demanding switching environments. This device offers a 650 V voltage rating, low Rds(on) of 74 milliohms, and a high pulsed current of 120 A, making it suitable for high-power applications. Its fast recovery diode, high avalanche ruggedness, and low gate charge provide excellent switching behavior, reducing energy loss and thermal stress. Available in a TO-247 package, it guarantees durability and ease of integration for high-efficiency power conversion systems.
Buy STMicroelectronics STW50N65DM6 high-voltage MOSFET now and experience unmatched reliability and efficiency in your switching applications.
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