The P-Channel 60 V MOSFET features a trench technology design optimized for load switching and DC/DC converter applications. It has low on-resistance (0.089 at Vas=10V), high continuous drain current capacity (up to 2.8A at 70°C), and a maximum drain-source voltage of -60V. The MOSFET supports pulsed drain currents up to -20A, avalanche energy of 11.25 mJ, and is RoHS compliant. Designed for efficient power management, it features low gate leakage and fast switching characteristics, suitable for compact, high-performance electronics.
Enhance your power management system with this high-performance P-Channel MOSFET designed for load switches and DC/DC converters. Featuring a maximum voltage of -60V, low Rds(on), high continuous drain current, and RoHS compliance, it ensures dependable operation in compact, high-speed electronic devices. The device offers fast switching times, low gate leakage, and robust thermal performance, making it ideal for demanding applications requiring precise control and efficiency. Order online now for quick delivery and integrated power solutions.
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You can download the SI3127DVT1GE3 datasheet or visit the Vishay website for support.
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