The Si4166DY is a high-performance N-channel power MOSFET designed for low-side DC/DC conversion applications in notebooks and gaming devices. It features a drain-source voltage of 30 V, low on-state resistance, and high pulsed drain current capacity, ensuring efficient power management. With halogen-free and RoHS compliance, it is suitable for environmentally conscious production. The device offers excellent thermal characteristics, including a maximum junction temperature of 150°C and a low junction-to-ambient thermal resistance, making it ideal for compact, high-reliability electronic systems.
Continuous Drain Current: 20.5 A at 25°C, 16.5 A at 70°C
Pulsed Drain Current: 70 A
Maximum Power Dissipation: 2.256 W
Operating Junction Temperature Range: -55°C to 150°C
Maximum Junction-to-Ambient Resistance: 41 °C/W
Maximum Junction-to-Foot Resistance: 19 °C/W
Body Diode Forward Voltage: 0.74 to 1.4 V
Body Diode Reverse Recovery Time: 28 to 55 ns
Package: SO-8 (Small Outline Integrated Circuit) with copper spreading for heat dissipation
Thermal Resistance (Junction-to-Ambient): 41 °C/W
Lead Material: Lead-free, halogen-free
Buy the Buy Vishay Si4166DY Power MOSFET Part Number SI4166DYT1GE3 Online
Purchase the Vishay Si4166DY Power MOSFET online today to ensure high efficiency in low-side DC/DC conversion circuits. This 30 V device offers low Rds(on) and high pulsed current capacity, suitable for notebook, gaming, and compact electronics. Its RoHS compliance and halogen-free design make it ideal for environmentally conscious projects. With excellent thermal performance, including a maximum junction temperature of 150°C and low thermal resistance, it guarantees reliable operation and longevity in demanding applications. Order now for quick delivery and optimized power efficiency.
Buy Vishay Si4166DY power MOSFET now and experience unmatched reliability and performance for your low-side switching and power management needs.
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