The Vishay Siliconix SiHGO39N60E is a N-channel Power MOSFET designed for high-efficiency switching applications. It features the 4th generation E series technology, offering low on-resistance (Rds(on)) of 0.034 Ω typical at Vgs = 10V, and a drain-source voltage of 600V, making it suitable for server, telecom, lighting, industrial, and solar inverter power supplies. This TO-247AC package provides excellent thermal performance with maximum junction-to-ambient resistance of 40 °C/W, ensuring reliable operation at high temperatures with avalanche energy rated for rugged switching scenarios.
Vishay SIHG039N60EGE3 High-Voltage Power MOSFET Specifications:
Drain-source voltage: 600 V
Gate-source voltage: ±30 V
Continuous drain current: 40 A at 100°C
Pulsed drain current: 199 A
Maximum power dissipation: 357 W
Maximum junction temperature: -55°C to +150°C
Rds(on): 0.034 Ω typical at Vgs = 10 V
Gate threshold voltage: 3-5 V
Gate leakage current: <1 nA at Vgs = +30 V
Soldering peak temperature: 260°C for 10 seconds
Static drain-source breakdown voltage: 600 V
Avalanche energy: 633 mJ
Thermal resistance junction to case: 0.35 °C/W
Thermal resistance junction to ambient: 40 °C/W
Buy the Buy Vishay SiHGO39N60E Part Number SIHG039N60E Online
Purchase the Vishay Siliconix SiHGO39N60E online today and enjoy reliable, high-voltage switching performance using advanced 4th generation technology. Perfect for server, telecom, industrial, and solar inverter applications, this N-channel MOSFET boasts a drain-source voltage of 600V and low Rds(on) of 0.034 Ω. Its robust thermal characteristics and avalanche energy rating ensure stable operation under demanding conditions. Designed in a TO-247AC package, it provides excellent thermal management and is ideal for high-efficiency power supply and lighting systems, ensuring longevity and efficiency in your projects.
Get Vishay SiHGO39N60E today—built for high-voltage switching and long-lasting durability.
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