The Vishay Siliconix SIHG35N60EF is an N-Channel MOSFET equipped with a fast body diode, designed for high-power applications like server power supplies, industrial motor drives, and renewable energy systems. It features a drain-source voltage of 600 V, low on-resistance of 0.084 Ω, ultra-low gate charge of 134 nC, and high pulsed drain current of 80 A, with avalanche energy rated at 298 mJ. Its TO-247AC package provides excellent thermal performance, suitable for demanding switching and power management tasks. With RoHS compliance and halogen-free construction, it ensures environmental safety and reliability.
Vishay SIHG35N60EFGE3 High-Voltage Power MOSFET Specifications:
Drain-source voltage: 600 V
Gate-source voltage: ±30 V
Continuous drain current at 25°C: 20 A
Pulsed drain current: 80 A
Maximum power dissipation: 250 W
On-state resistance: 0.084 Ω (typ.)
Gate charge: 134 nC
Avalanche energy: 298 mJ
Operating junction temperature range: -55°C to +150°C
Thermal resistance junction-to-case: 0.05 °C/W
Thermal resistance junction-to-ambient: 62 °C/W
Package: TO-247AC
RoHS compliant and halogen-free
Soldering temperature (peak 10 sec): 260°C
Reverse diode forward voltage: approximately 1.2 V
Buy the Buy Vishay SIHG35N60EF Part Number SIHG35N60EFGE3 Online
Order the Vishay SIHG35N60EF high-voltage N-channel MOSFET online today to enhance your power supply or motor drive systems. Featuring a drain-source voltage of 600 V and low on-resistance of 0.084 Ω, it ensures efficient switching with minimal losses. The device offers high pulse currents up to 80 A and avalanche energy rated at 298 mJ, making it ideal for demanding industrial, renewable energy, and lighting applications. Its TO-247AC package guarantees excellent thermal performance, RoHS compliance, and halogen-free construction for environment-friendly operation, all available for quick online purchase.
Buy Vishay SIHG35N60EF now and experience unmatched reliability and performance in power switching and industrial applications.
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