The Vishay Siliconix SIHU4N80AE is a high-voltage N-channel power MOSFET designed for switching applications such as power supplies, lighting, motor drives, and renewable energy systems. This device features low gate charge, low on-resistance, and avalanche energy rating, making it suitable for efficient, high-speed switching with reduced losses. Its robust construction supports operation up to 150°C junction temperature, with a drain-source voltage of 800 V and a continuous drain current of 2.6 A. Ideal for industrial, telecom, and server power applications, it ensures reliable performance in demanding environments.
Vishay SIHU4N80AEGE3 High-Voltage Power MOSFET Specifications:
Drain-source voltage: 800 V
Gate-source voltage: ±30 V
Maximum continuous drain current: 2.6 A at 100°C
Pulsed drain current: 7.0 A
Maximum power dissipation: 62.5 W
Operating junction temperature: -55°C to +150°C
Drain-source on-resistance: 1.25 Ω at Vgs=10 V
Gate charge: 165 nC
Gate-source threshold voltage: 2.0 V to 40 V
Avalanche energy: >6.9 mJ
Drain-source breakdown voltage: 800 V
Thermal resistance junction-to-ambient: 62 °C/W
Soldering temperature (PEAK): 260 °C for 10s
RoHS and halogen-free compliant
Buy the Buy Vishay Siliconix SiHU4N80AE Part Number SIHU4N80AE online
Purchase the Vishay Siliconix SIHU4N80AE online today to ensure reliable, high-voltage switching for industrial, lighting, or renewable energy projects. This MOSFET offers optimized low gate charge, excellent avalanche energy rating, and robust operation up to 150°C. Perfect for high-efficiency power supplies, motor drives, and telecom equipment, ensuring stable performance and reduced losses. Enjoy fast delivery and expert support when you buy this high-quality power transistor directly from authorized distributors.
Order your Vishay SeriesSIHU4N80AE high-voltage MOSFET today and enjoy efficient switching performance for power supplies, industrial and telecom applications.
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