The SIR120DP-T1-RE3 is a high-performance N-Channel 80V MOSFET designed for efficient power switching applications. Featuring a PowerPAK SO-8 package, it offers very low Rds(on), excellent thermal performance, and is suitable for DC/DC converters, power supplies, motor drive control, and load switching. Its key specifications include a drain-source voltage of 80V, continuous drain current of 19.5A at 150°C, and low gate charge for fast switching. The device is RoHS compliant, RoHS, RoHS, and tested for Rg and UIS, making it reliable for demanding electronic environments.
Vishay SIR120DPT1RE3 High-Voltage Power MOSFET Specifications:
Drain-source voltage: 80 V
Gate-source voltage: +20 V
Continuous drain current: 19.5 A at 150°C
Pulsed drain current: 200 A
Maximum power dissipation: based on package limits
Operating temperature range: -55°C to +150°C
Junction-to-ambient thermal resistance: 18°C/W typical, 23°C/W maximum
Junction-to-case thermal resistance: 1°C/W typical, 1.25°C/W maximum
Body diode continuous current: 90 A
Body diode voltage: 0.74 V at 5A
Gate charge: 35 to 73 nC
Input capacitance: 4150 pF
Output capacitance: 470 pF
Reverse recovery charge: 66 to 132 nC
Recommended soldering peak temperature: 260°C
Buy the Buy Vishay SIR120DP-T1-RE3 High-Voltage N-Channel MOSFET Online
Order the Vishay SIR120DP-T1-RE3 online today for superior power switching performance. This high-voltage N-channel MOSFET in PowerPAK SO-8 package is ideal for DC/DC converters, power supplies, motor control, and load switching. With a drain-source voltage of 80V, a continuous drain current of 19.5A, and low Rds(on), it ensures high efficiency and thermal stability. Its RoHS compliance and extensive testing guarantee reliability in industrial and consumer electronic applications. Purchase now to enhance your circuit design with this robust and efficient MOSFET.
Get Vishay SIR120DP-T1-RE3 today—designed for efficient power switching and reliable performance in demanding electronics.
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