This is an N-channel 60V Power MOSFET with TrenchFET® Gen IV technology. It features a very low Rds(on) and Qg figure-of-merit, optimized for minimal conduction losses. The device has been fully tested for gate resistance (Rg) and unsafe IC short circuit (UIS) conditions, ensuring high reliability and performance. Suitable for switching applications in power supplies, motor drives, and solar micro inverters, it offers excellent thermal stability with a maximum junction temperature of +150°C, and low on-resistance, making it ideal for efficient high-current switching.
Buy the Vishay Series PowerPAK 1212-88: SISS26DNT1GE3
Order the Vishay SISS26DNT1GE3 online today and experience reliable high-current switching for power supplies, motor drives, and solar applications. This N-channel MOSFET offers low Rds(on), low gate charge, and excellent thermal stability, ensuring efficient performance and long-term durability. Suitable for demanding power electronics, it provides high pulse current handling and is tested for safety and reliability. Optimize your designs with this premium MOSFET, available for fast delivery and seamless online purchase—perfect for engineers and technicians seeking top performance and dependability.
Get Vishay SISS26DNT1GE3 today—built for high-current switching and thermal reliability.
Frequently Asked Questions
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You can click on the BUY or RFQ button to purchase SISS26DNT1GE3 from an authorized Vishay distributor.
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