The DG301BDJ-E3 is a single-pole double-throw (SPDT) monolithic CMOS analog switch designed for low leakage and low power applications. Fabricated on the Siliconix PLUS-40 CMOS process, it is latch-up proof and capable of blocking up to 30 V peak-to-peak when in the off state. The device features an epitaxial layer to prevent latch-up and provides equal conduction in both directions when turned on, with low on-resistance to minimize signal errors. It consumes approximately 3.5 mW of power, making it suitable for battery-powered systems without compromising switching speed. This switch supports break-before-make switching, is CMOS and quasi-TTL compatible, and allows single supply operation by connecting the V- rail to ground. It offers a full rail-to-rail analog signal range, low signal error, fast switching, and low on-resistance, suitable for various applications including industrial automation, sensing, instrumentation, communications, power management, and portable devices.
Purchase the Vishay DG301BDJ-E3 CMOS analog switch online today to enhance your low power, high-speed switching projects. Designed on the Siliconix PLUS-40 CMOS process, this latch-up proof device features low on-resistance, fast switching times of 150 ns, and a full rail-to-rail voltage range up to 15 V. Its low power consumption of approximately 3.5 mW makes it ideal for portable and battery-operated systems. With break-before-make switching and CMOS compatible control, it delivers reliable performance for industrial automation, sensing, instrumentation, communication, and power management applications, ensuring your design’s precision and efficiency.
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You can download the DG301BDJE3 datasheet or visit the Vishay website for support.
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