The IRF610 is an N-channel power MOSFET from Vishay Siliconix ideal for high-speed switching applications. It features low on-resistance, rugged design, and fast switching capabilities in a TO-220AB package. With a drain-source voltage of 200 V and a continuous drain current of 24 A at 100°C, it offers efficient power handling. The device's low gate charge and simple drive requirements make it suitable for various industrial and commercial power control applications, providing reliability and cost-effectiveness in circuit design.
Drain-Source On-Resistance: 1.5 Ω (Vgs = 10 V, Id = 2 A)
Total Gate Charge: 8.2 nC
Thermal Resistance, Junction-to-Ambient: 62 °C/W
Operating Junction and Storage Temperature Range: -55°C to +150°C
Peak Diode Recovery dV/dt: 5.0 V/ns
Soldering Temperature: 300°C for 10 seconds
Buy the Vishay Series Power MOSFET: IRF610PBF
Purchase the Vishay IRF610PBF power MOSFET online today and benefit from its robust design, low Rds(on), and fast switching features. Perfect for power conversion, motor control, and industrial automation, this high-voltage N-channel MOSFET delivers efficient performance with a drain-source voltage of 200 V and a continuous drain current of 24 A at 100°C. Its easy drive requirements and cost-effective TO-220AB package make it an ideal choice for engineers seeking reliability and cost savings. Order now to enhance your electronic systems with this high-quality power device.
Order your Vishay Series IRF610PBF power MOSFET today and ensure reliable high-speed switching for your industrial applications.
Frequently Asked Questions
Where can I buy Vishay IRF610PBF?
You can click on the BUY or RFQ button to purchase IRF610PBF from an authorized Vishay distributor.
How do I troubleshoot issues or seek technical support for part IRF610PBF?
You can download the IRF610PBF datasheet or visit the Vishay website for support.
Who is the manufacturer of IRF610PBF?
Vishay
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