Vishay IRFI830GPBF High-Voltage N-Channel Power MOSFET
The IRFI830G is a high-voltage N-channel power MOSFET in a TO-220 FULLPAK isolated package, designed for robust switching applications. It features a drain-source voltage of 500V, low on-resistance of 15 milliohms, and supports a continuous drain current of 3A at 25°C. The device offers a maximum power dissipation of 35W, high thermal stability, and excellent avalanche energy handling. Its rugged construction ensures excellent electrical isolation, making it ideal for industrial, commercial, and automotive uses requiring reliable high-voltage switching.
Vishay IRFI830GPBF High-Voltage N-Channel Power MOSFET Specifications:
Drain-Source Voltage: 500 V
Gate-Source Voltage: ±20 V
Continuous Drain Current: 3 A at 25°C, 2.0 A at 100°C
Power Dissipation: 35 W
Repetitive Avalanche Current: 34 A
Maximum Power Dissipation: 35 W
Maximum Junction Temperature: -55°C to +150°C
Thermal Resistance Junction-to-Case: 3.6 °C/W
Thermal Resistance Junction-to-Ambient: 65 °C/W
Gate Threshold Voltage: 2.0 V to 40 V
On-Resistance (Vds=10V, Id=1.9A): 15 mΩ
Total Gate Charge: 38 nC
Drain-Source Breakdown Voltage: 500 V
Vgs Reverse Leakage: up to 100 nA
Soldering Temperature (Peak): 300°C for 10s
Mounting Torque: 10 lbf.in
Buy the Vishay Series Power MOSFET: IRFI830G
Order the Vishay IRFI830G high-voltage N-channel power MOSFET online today for reliable, efficient switching in industrial, automotive, and commercial power systems. With a drain-source voltage of 500V, low on-resistance, and robust avalanche energy handling, this device ensures optimal performance and durability. Its isolated TO-220 FULLPAK package simplifies mounting and thermal management, making it ideal for demanding high-power applications where safety, efficiency, and reliability are essential. Secure your supply now and enhance your system’s performance.
Buy Vishay IRFI830G now and experience unmatched reliability and high-voltage switching performance in your industrial applications.
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