The IRL640SPBF is a third-generation N-channel enhancement-mode Power MOSFET with fast switching, rugged design, and low ON-resistance. Suitable for high-current applications, it features a D2PAK (TO-263) surface-mount package, capable of dissipating up to 2W. The device provides excellent efficiency, with RDS(on) measured at VGS = 4V and 5V. It supports dynamic dV/dt and avalanche ratings, with a drain-source voltage of 200V, continuous drain current of 4A at 100°C, and a power dissipation of 125W. Ideal for industrial, power management, and switching applications, it is RoHS-compliant and halogen-free.
Discover the Vishay IRL640SPBF Power MOSFET, a high-performance N-channel device designed for demanding industrial and power management applications. Featuring fast switching, low RDS(on), and a rugged package, it provides exceptional efficiency and thermal performance. With a drain-source voltage of 200V and continuous drain current of 4A at 100°C, it handles high power loads effectively. Its RoHS compliance and halogen-free construction make it ideal for eco-conscious engineering solutions. Purchase online today for dependable, high-power switching with optimized thermal management and longevity.
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You can download the IRL640SPBF datasheet or visit the Vishay website for support.
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