The Vishay Siliconix SI1926DL-T1-E3 is a low on-resistance dual N-channel power MOSFET optimized for low power load switching applications. It features a trenchFET design with a maximum drain-source voltage of 60 V, typical gate threshold of 1 V, and high pulsed drain current of 0.65 A. The device is protected against ESD up to 1800 V, RoHS compliant, and suitable for space-constrained circuit designs. Its low gate charge and gate resistance ensure fast switching, making it ideal for efficient load switches and high-speed switching tasks.
Vishay SI1926DLT1BE3 Dual N-Channel Power MOSFET Specifications:
Drain-Source Voltage: 60 V
Gate-Source Voltage: ±20 V
Maximum Continuous Drain Current: 0.34 A at 25°C, 0.27 A at 70°C
Pulsed Drain Current: 0.65 A
Maximum Power Dissipation: 0.30 W at 25°C, 0.20 W at 70°C
Operating Junction Temperature Range: -55°C to +150°C
Thermal Resistance Junction-to-Ambient: 415 °C/W maximum
Maximum Junction-to-Foot Resistance: 350 °C/W
Gate Threshold Voltage: 1 V to 25 V
Gate-Source Leakage: Max 150 nA at 10 V
Drain-Source On-Resistance: Max 3 Ω at Vgs=4.5 V
Body Diode Forward Voltage: Max 0.8 V at 0.3 A
Reverse Recovery Time: Max 165 ns
Body Diode Reverse Recovery Charge: Max 20 nc
Gate Charge: Max 0.9 nC
Rise Time: Max 18 ns
Fall Time: Max 22 ns
Buy the Vishay SI1926DL-T1-E3 – Reliable Dual N-Channel MOSFET for Industrial Applications
Buy the Vishay Siliconix SI1926DL-T1-E3 dual N-channel power MOSFET online today and experience reliable performance. Its low on-resistance, high pulsed current capacity, and efficient switching make it ideal for load switching in industrial and electronic projects. The device's compact SOT-363 package ensures space-saving integration, while its RoHS compliance and ESD protection provide added safety and environmental benefits. Enhance your designs with this high-quality electronic component available for quick online ordering. Don't miss out—upgrade your systems today!
Order your Vishay Siliconix SI1926DL-T1-E3 dual N-channel MOSFET today and enhance your circuit efficiency with this low on-resistance, high-speed device.
Frequently Asked Questions
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