The Si3407DV-T1-GES is a high-performance P-Channel 20V power MOSFET designed for load switching in various electronic applications. This halogen-free, RoHS-compliant device features low on-resistance, high current capacity, and excellent switching characteristics, making it suitable for notebook PCs, power management, and load control. Its robust thermal and electrical specifications ensure reliable performance under demanding conditions, while testing guarantees high quality and safety standards. Ideal for engineers seeking efficient power MOSFET solutions with environmentally friendly compliance.
Vishay SI3407DVT1GE3 P-Channel Power MOSFET Specifications:
Drain-Source Voltage: 20 V
Gate-Source Voltage: ±12 V
Maximum Continuous Drain Current: 65 A at 70°C
Pulsed Drain Current: 75 A
Thermal Resistance Junction-to-Ambient: 62.5 °C/W
Maximum Power Dissipation: 7 W at 70°C
Operating Junction Temperature Range: -55 to 150 °C
Gate Threshold Voltage: -0.65 to -1.5 V
On-State Resistance (Rds(on)): 0.0200 to 0.0372 Ω
Gate-Source Leakage: <100 nA at Vgs=0 V
Body Diode Forward Voltage: -0.08 to -0.12 V
Body Diode Reverse Recovery Time: 37 to 56 ns
Total Gate Charge: 42 to 63 nC
Device is RoHS and Halogen-free compliant
Buy the Vishay Series P-Channel 20V MOSFET: SI3407DV-T1-GES
Purchase the Vishay Series P-Channel 20V MOSFET SI3407DV-T1-GES online today to benefit from its low Rds(on), high current capacity, and RoHS compliance. This robust device is ideal for load switching, power management, and electronic control applications. With proven thermal and electrical performance, it ensures dependable operation in demanding environments. Secure your supply through our online store and enhance your projects with this environmentally friendly, high-quality MOSFET that meets industry standards for safety and efficiency.
Order your Vishay Series P-Channel 20V MOSFET SI3407DV-T1-GES today and ensure reliable, efficient load switching for your electronic projects.
Frequently Asked Questions
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