The SI3499DV-T1-GE3 is a P-channel enhancement-mode Power MOSFET utilizing TrenchFET® technology, designed for load switch applications in power management and portable devices. It features ultra-low ON-resistance, a 1.5V gate threshold voltage, and is RoHS-compliant, halogen-free, and tested for quality and reliability. The device operates effectively over a broad temperature range from -55°C to 150°C, making it suitable for industrial, power management, and portable electronic applications where efficient switching and thermal performance are critical.
Package: TSOP-6, with recommended copper spreading footprint for heat dissipation
Reflow Soldering Profile: Max peak temperature of 240°C with specific heating zones
Thermal performance characterized by junction-to-case and junction-to-foot resistances
Buy the Vishay Series Power MOSFET: Load Switch High-Speed Switching: SI3499DV-T1-GE3
Order the Vishay SI3499DV-T1-GE3 online today to benefit from fast delivery and easy procurement of a high-performance P-channel MOSFET. This device offers ultra-low ON-resistance, a 1.5V gate threshold, and broad thermal operation from -55°C to 150°C. Perfect for load switches in industrial, power management, and portable electronics. With reliable RoHS and halogen-free standards, ensuring safety and environmental compliance, buying online ensures quick integration into your designs. Enhance your electronic systems with this efficient, high-quality MOSFET available for immediate purchase.
Buy Vishay SI3499DV-T1-GE3 now and experience unmatched reliability, low ON-resistance, and high efficiency for your power switching needs.
Frequently Asked Questions
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You can click on the BUY or RFQ button to purchase SI3499DVT1GE3 from an authorized Vishay distributor.
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