The Vishay Siliconix N-Channel MOSFET Si4434ADY is a high-performance power transistor designed for use in DC/DC converters, boost converters, LED backlighting, load switches, and power switching applications. Featuring a drain-source voltage of 250 V, low on-state resistance, and high current handling capability, it ensures efficient power management with robust thermal and electrical characteristics. Its SO-8 package makes it suitable for surface-mount assembly, offering reliability and durability for demanding electronic circuits. Ideal for engineers seeking a dependable power MOSFET for high-voltage switching.
Vishay SI4434ADYT1GE3 Power MOSFET Specifications:
Drain-source voltage Vos: 250 V
Gate-source voltage Vas: +20 V
Continuous drain current at 70°C: 2.3 A
Pulsed drain current: 5 A
On-state resistance (Vgs=10V, Id=2.8A): 0.150 Ω
Thermal resistance junction to ambient: 43 °C/W
Maximum power dissipation: 1.985 W
Operating junction temperature range: -55°C to +150°C
Package: SO-8 surface-mount
Body diode forward voltage: 0.8 V
Gate charge (Qg): 30-45 nC
Switching times: Rise 22-40 ns, Fall 22-50 ns
Thermal resistance junction to case: 24 °C/W
RoHS compliant, lead-free and halogen-free
Buy the Buy Vishay Si4434ADY Part Number SI4434ADY Online
Discover the Vishay Si4434ADY N-channel power MOSFET, ideal for high-voltage switching applications such as DC/DC converters, load switches, and LED lighting. Featuring a drain-source voltage of 250V and a continuous drain current of 2.3A, it offers low on-resistance and excellent thermal performance. Its surface-mount SO-8 package ensures ease of assembly and reliable operation in demanding circuits. Perfect for engineers and electronics professionals seeking durable, high-efficiency power transistors for compact power management solutions.
Get Vishay Si4434ADY today—designed for high-voltage switching with low Rds(on) and robust current capacity, perfect for power electronics and LED backlighting.
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