The Vishay Si5429DU is a P-Channel 30 V MOSFET featuring the PowerPAK ChipFET package, designed for power management applications such as load switching and DC/DC converters. It offers low on-resistance, high current handling capacity, and excellent thermal performance with a slim profile of 0.8 mm. Its robust construction ensures reliable operation in mobile computing, adaptor switching, and other high-efficiency power management solutions. The device is RoHS compliant, 100% Rg tested, and suitable for compact, high-performance electronic systems.
Vishay SI5429DUT1GE3 P-Channel Power MOSFET Specifications:
Drain-source voltage Vos: -30 V
Gate-source voltage Ves: +20 V
Continuous drain current at 25°C: 2.8 A
Pulsed drain current: -50 A
Maximum power dissipation: 3.1 W at 25°C
Operating junction temperature range: -55°C to +150°C
Thermal resistance junction-to-ambient: 40 °C/W
Package: PowerPAK ChipFET
RoHS compliant, lead-free and halogen-free
Soldering temperature (peak): 260°C
Gate threshold voltage: -2.2 V
On-resistance (Rds(on)): 0.022 Ω at Vgs = -4.5 V, 0.015 Ω at Vgs = -10 V
Gate charge, total: 63 nC
Capacitance, input: 2320 pF
Body diode forward voltage: 0.83 V at 10 A
Body diode reverse recovery time: 20 ns
Buy the Buy Vishay Si5429DU Part Number SI5429DUT1GE3 Online
Purchase the Vishay Si5429DU P-Channel MOSFET online for reliable power management in compact, high-performance electronic applications. This low Rds(on) device is ideal for load switching and DC/DC converters, ensuring efficient operation with a slim profile of just 0.8 mm. Its thermally enhanced PowerPAK ChipFET package offers excellent thermal dissipation and high current handling, making it perfect for mobile computing, adaptor switching, and other demanding power solutions. Order now to benefit from Vishay's quality and durability in your electronic designs.
Get Vishay Si5429DU today—built for precise power switching and long-lasting durability in high-efficiency electronic systems.
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