The Vishay Siliconix SiDR220DP is a high-performance N-Channel MOSFET designed for reliable switching in industrial power management applications. Featuring a 25 V drain-source voltage and low ON-resistance, it offers excellent efficiency for high power density circuits, such as synchronous rectification, buck converters, and load switching. Its trench technology ensures optimal charge and switching characteristics, while the PowerPAK SO-8DC package provides enhanced thermal performance. Certified for RoHS compliance, it is suitable for demanding environments requiring robust and efficient power components.
Vishay SIDR220DPT1RE3 High Power N-Channel MOSFET Specifications:
Drain-source voltage Vos: 25 V
Gate-source voltage Ves: +16 /-12 V
Continuous drain current (Ty=150°C): 70.2 A
Pulsed drain current (t=100 μs): 500 A
Maximum power dissipation at T=25°C: Not specified
Thermal resistance junction-to-ambient: Max 20°C/W
On-state resistance Rds(on): 0.00058 Ω at Ves=10 V, 0.00082 Ω at Ves=4.5 V
Gate charge Qg: 61 nC typical
Channel technology: TrenchFET® Gen IV
Package: PowerPAK SO-8DC, lead-free, halogen-free
Operating temperature range: -55°C to +150°C
Soldering peak temperature: 260°C
Body diode forward voltage: 0.71 V at 5A
Body diode reverse recovery time: 63 ns
Buy the Vishay SiDR220DP – Reliable MOSFET for Industrial Applications
Purchase Vishay SiDR220DP today for robust and efficient power management in industrial environments. Designed for high power density applications, this MOSFET offers low ON-resistance, superior thermal performance, and RoHS compliance. Perfect for synchronous rectification, buck converters, and load switching, ensuring reliable operation and energy efficiency. Order online now and benefit from fast delivery, genuine quality, and technical support to enhance your industrial automation and power systems.
Buy Vishay SiDR220DP now and experience unmatched reliability and performance in high power density circuits and switching applications.
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