The Vishay Siliconix SIDR392DPT1RE3 is a high-performance N-channel MOSFET designed for power switching applications. This PowerPAK SO-8DC package offers excellent thermal management with top side cooling features, optimized gate charge, and low Rds(on) for improved efficiency. Suitable for synchronous rectification, DC/DC converters, load switching, and battery management, it can handle 30 V drain-source voltage and continuous drain currents up to 1.8 A. Its robust construction ensures reliability in high power density environments, featuring low gate charge and fast switching characteristics.
Vishay SIDR392DPT1RE3 N-Channel Power MOSFET Specifications:
Package: PowerPAK SO-8DC
Drain-source Voltage: 30 V
Gate-source Voltage: +20/-16 V
Continuous Drain Current: 1.8 A at 25°C
Pulsed Drain Current: 200 A
Maximum Power Dissipation: 1.5 W
Gate Threshold Voltage: 1 - 22 V
On-Resistance: 0.00062 Ω at Ves = 10 V, 0.00093 Ω at Ves = 4.5 V
Gate Charge: 25.2 nC typical
Body Diode Forward Voltage: 0.7 V at 5 A
Operating Junction Temperature: -55°C to +150°C
Thermal Resistance Junction-to-Ambient: Max 20°C/W
Soldering Temperature: Peak 260°C
Buy the Vishay Series PowerPAK SO-8DC: N-Channel MOSFET SIDR392DPT1RE3
Purchase the Vishay Siliconix N-Channel Power MOSFET in PowerPAK SO-8DC package today. Designed for high efficiency in power switching, it features low on-resistance, fast switching, and excellent thermal management. Ideal for DC/DC converters, load switching, and synchronous rectification, this MOSFET guarantees reliable operation under demanding conditions. Easy to integrate into your circuits, it ensures reduced power loss and enhanced performance for a wide range of industrial and electronic applications. Buy online now to optimize your project’s power efficiency and reliability.
Order your Vishay Series PowerPAK SO-8DC SIDR392DPT1RE3 today and ensure reliable, efficient power switching for your high-density applications.
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