The Vishay Siliconix SiDR608DP is a high-performance N-Channel MOSFET in PowerPAK SO-8DC package, designed for high power density applications such as synchronous rectification and motor drive control. It features a maximum drain-source voltage of 45 V, low on-resistance, and high continuous drain current ratings. The device is RoHS compliant, halogen-free, and tested for Rg and UIS. Its robust thermal and electrical characteristics ensure reliable operation in demanding environments, making it suitable for efficient power switching in modern electronic systems.
On-state drain-source resistance Rds(on) 0.00120 Ω at Ves = 10 V
Gate charge Qg 76 nC
Gate resistance Rg 0.3 Ω
Body diode voltage Vsd 0.7 V
Junction temperature range -55 to +150 °C
Thermal resistance junction-to-ambient 20 °C/W
Soldering peak temperature 260 °C
Steady-state junction-to-case resistance 0.9 °C/W
Buy the Buy Vishay Siliconix SiDR608DP Part Number SIDR608DPT1RE3 Online
Experience the efficiency and reliability of the Vishay Siliconix SiDR608DP N-Channel MOSFET, a high-power device suitable for synchronous rectification and motor control. In a PowerPAK SO-8DC package, it offers low Rds(on), high drain current capacity, and excellent thermal stability. Perfect for modern power management systems, this MOSFET ensures superior switching performance, durability, and energy efficiency. Order now online to enhance your project's power handling capabilities with a proven, RoHS-compliant component designed for demanding environments.
Get Vishay Siliconix SiDR608DP today—built for high power efficiency and reliable performance in demanding electronic applications.
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