Vishay SIDR638DPT1GE3 High-Performance Power MOSFET
The Vishay Siliconix SIDR638DPT1GE3 is a high-performance N-channel MOSFET designed for use in synchronous rectification, DC/DC converters, motor drive control, and load switching applications. Featuring a PowerPAK SO-8DC package, it provides low Rds(on), excellent thermal characteristics, and high current handling capabilities, making it suitable for demanding power management circuits. Its low gate charge and fast switching times ensure efficient operation, helping reduce system losses and improve overall efficiency in various electronic power applications.
Vishay SIDR638DPT1GE3 High-Performance Power MOSFET Specifications:
Drain-source voltage: 40 V
Gate-source voltage: +20 V / -16 V
Continuous drain current at 25°C: 64.65 A
Pulsed drain current: 400 A
Maximum power dissipation at 25°C: 4 W
Junction operating temperature: -55°C to +150°C
Maximum junction-to-ambient thermal resistance: 20°C/W
Gate charge typically: 30.5 nC
Output capacitance: 1530 pF
Body diode forward voltage: 0.74 V at 10 A
Reverse recovery time: 59 ns
Body diode reverse recovery charge: 1700 nc
Package: PowerPAK SO-8DC, RoHS and halogen-free
Peak soldering temperature: 260°C
Buy the Vishay Siliconix Series Power MOSFET: SIDR638DPT1GE3
Elevate your power circuit designs with the Vishay Siliconix SIDR638DPT1GE3, a robust N-channel MOSFET engineered for efficiency and reliability. Its low Rds(on) minimizes power loss, while fast switching capabilities enhance overall system performance. In a compact PowerPAK SO-8DC package, it offers excellent thermal management and high current handling suitable for synchronous rectification, DC/DC converters, motor control, and load switching applications. Purchase online today to incorporate this high-quality component into your next project for optimal power efficiency and durability.
Buy Vishay Siliconix SIDR638DPT1GE3 MOSFET now and experience unmatched reliability and high efficiency in power management.
Frequently Asked Questions
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