The Vishay Siliconix SiHA17N80E is an N-Channel Power MOSFET designed for high-performance switching applications. Featuring a low figure-of-merit (Ron x Qg), ultra-low gate charge, and avalanche energy rating, it minimizes conduction and switching losses in server and telecom power supplies, industrial, and renewable energy systems. With a drain-source voltage of 800V and a maximum power dissipation of 35W, it is suitable for high-voltage, high-current applications such as SMPS, PFC, HID lighting, and induction heating. Its robust thermal and electrical characteristics ensure reliable long-term operation.
Vishay SIHA17N80EGE3 High-Voltage Power MOSFET Specifications:
Drain-source voltage: 800 V
Gate-source voltage: ±30 V
Continuous drain current: 10 A at 100°C
Pulsed drain current: 45 A
Maximum power dissipation: 35 W
Operating junction temperature: -55°C to +150°C
Maximum junction-to-ambient thermal resistance: 65 °C/W
Drain-source on-resistance: 0.29 Ω at 10V Vgs
Gate charge: 122 nC
Avalanche energy: 353 mJ
Soldering peak temperature: 300°C for 10s
Mounting torque: 0.6 Nm
RoHS compliant, halogen-free
Static and dynamic electrical ratings confirmed at 25°C
Package: Thin-Lead TO-220 FULLPAK
Buy the Buy Vishay Siliconix SiHA17N80E Part Number SIHA17N80E Online
Enhance your power systems with the Vishay Siliconix SiHA17N80E high-voltage N-channel MOSFET. Featuring a drain-source voltage of 800V, low gate charge, and robust thermal performance, it optimizes switching efficiency for industrial, telecom, and renewable energy applications. This reliable MOSFET reduces losses and provides long-term operation in high-voltage environments. Purchase SIHA17N80E online today to benefit from superior electrical characteristics, RoHS compliance, and easy installation. Ensure your power electronics meet demanding specifications with this high-performance device.
Get Vishay Siliconix SiHA17N80E today—built for high-voltage power switching and long-lasting durability.
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