The Vishay Siliconix SIHA186N60EF is an N-Channel Power MOSFET designed for high-performance switching applications. Featuring a low on-resistance of 0.168-0.193 Ω at 10 V Vgs and a continuous drain current of up to 5.3 A at 100°C, it offers efficient power handling for server and telecom power supplies, motor drives, solar inverters, and industrial equipment. Its TO-220 FULLPAK package ensures reliable thermal management, with a maximum drain-source voltage of 600 V and avalanche energy rated at 24 mJ. Ideal for demanding switching and power control tasks in modern electronic systems.
Vishay SIHA186N60EFGE3 Power MOSFET Specifications:
Maximum Drain-Source Voltage: 600 V
Gate-Source Voltage: ±30 V
Continuous Drain Current: 5.3 A at 100°C
Package: TO-220 FULLPAK, Thin Lead, RoHS and Halogen-free
Maximum Power Dissipation: 156 W
Maximum Junction Temperature: -55°C to +150°C
On-Resistance Rds(on): 0.168 - 0.193 Ω at Vgs = 10 V
Gate Charge Qg: 24 - 32 nC
Avalanche Energy: 24 mJ
Thermal Resistance Junction-to-Case: 38 °C/W
Thermal Resistance Junction-to-Ambient: 65 °C/W
Peak Diode Recovery dv/dt: Controlled; includes body diode with 43 A forward current
Soldering Temperature: 260 °C for 10 seconds
Operating Temperature Range: -55°C to +150°C
Buy the Buy Vishay Siliconix Power MOSFET SIHA186N60EF Part Number SIHA186N60EFGE3 Online
Purchase the Vishay Siliconix power MOSFET SIHA186N60EF online now to take advantage of its high efficiency, low Rds(on), and robust thermal performance. This advanced N-Channel MOSFET is ideal for switching power supplies, motor drives, solar inverters, and industrial applications, ensuring reliable operation in demanding environments. Its TO-220 FULLPAK package facilitates easy mounting and excellent heat dissipation, supporting high power handling with up to 600 V drain-source voltage and 5.3 A continuous drain current. Secure your supply chain with quick online ordering and accelerate your project timelines today.
Order your Vishay Siliconix SIHA186N60EF power MOSFET today and ensure your projects benefit from reliable high-voltage switching performance.
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