The SiHA21N60EFGE3 is a high-performance N-channel power MOSFET with a fast body diode, designed for telecom, server power supplies, lighting, consumer, industrial, and renewable energy applications. It features a drain-source voltage of 600 V, low on-resistance, ultra-low gate charge, and avalanche energy rated capability. Its compact TO-220 FULLPAK package offers excellent thermal performance with a maximum junction temperature of +150°C. Suitable for switch mode power supplies, solar inverters, and other demanding power switching applications, this MOSFET provides robustness, efficiency, and reliability.
Order the Vishay SIHA21N60EFGE3 online now to ensure your power systems operate with optimal efficiency and robustness. This high-voltage, low on-resistance N-channel MOSFET is ideal for telecom, industrial, and renewable energy applications. Its compact TO-220 FULLPAK package provides excellent thermal performance, supporting continuous drain currents up to 14 A at 100°C and pulsed currents of 53 A. With a maximum junction temperature of 150°C, low gate charge, and avalanche energy rated capability, it is perfect for switch mode power supplies, solar inverters, and demanding power switching environments. Efficiently power your projects and ensure maximum reliability with quick online ordering.
You can click on the BUY or RFQ button to purchase SIHA21N60EFGE3 from an authorized Vishay distributor.
You can download the SIHA21N60EFGE3 datasheet or visit the Vishay website for support.
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