The Vishay Siliconix SiHA22N60AE-GE3 is a high-performance N-Channel Power MOSFET designed for switch mode power supplies, server and telecom power applications, and renewable energy systems. It features a low on-resistance, ultra low gate charge, and avalanche energy rating. The device offers high current handling capabilities with a continuous drain current of 12 A at 100°C, a drain-source voltage of 600 V, and a maximum power dissipation of 33 W. Its RoHS and halogen-free construction ensure environmental compliance and reliability in demanding industrial environments.
Operating junction temperature range: -55°C to +150°C
Maximum junction-to-ambient thermal resistance: 65 °C/W
Maximum junction-to-case resistance: 38 °C/W
Gate charge: 96 nC
Input capacitance: 145 pF
Output capacitance: 73 pF
Reverse diode forward voltage: 1.2 V at 11A
Body diode reverse recovery charge: 98 μC
Peak diode recovery dV/dt: 31 V/μs
Soldering peak temperature: 300°C for 10 seconds
Buy the Vishay SiHA22N60AE-GE3 – Reliable Power MOSFET for Industrial Applications
Secure your supply of high-performance power switching components with the Vishay SiHA22N60AE-GE3. Designed for demanding industrial, telecom, and renewable energy applications, this N-Channel MOSFET features low on-resistance, low gate charge, and robust avalanche energy rating. With a voltage rating of 600 V and a continuous drain current of 12 A at 100°C, it ensures efficient operation and thermal stability in high-power environments. Excellent for switch mode power supplies, motor drives, and induction heating systems. Order online today and enhance your device reliability and energy efficiency.
Buy Vishay SiHA22N60AE-GE3 now and experience unmatched reliability and performance in power switching and energy management.
Frequently Asked Questions
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You can click on the BUY or RFQ button to purchase SIHA22N60AEGE3 from an authorized Vishay distributor.
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