The Vishay SiHA24N80AE is an N-Channel Power MOSFET with a high drain-source voltage of 800 V, suitable for server, telecom, power supplies, and industrial applications. It features low on-resistance of 0.160 Ω at 10 V Vgs, low gate charge, and excellent avalanche energy ratings of 127 mJ for reliable switching performance. Uses include high-efficiency switch mode power supplies, lighting, induction heating, motor drives, battery chargers, and solar inverters. The MOSFET is RoHS compliant, halogen-free, and designed for high-power, high-temperature environments with a junction range of -55°C to +150°C.
Vishay SIHA24N80AEGE3 High-Voltage Power MOSFET Specifications:
Drain-source voltage Vos: 800 V
Gate-source voltage Ves: 30 V
Continuous drain current at 100°C: 5 A
Pulsed drain current: 51 A
Maximum power dissipation: 35 W
Operating junction temperature range: -55°C to +150°C
Gate charge: 59 to 89 nC
On-resistance (Rds(on)): 0.160 Ω typical
Avalanche energy (Eas): 127 mJ
Soldering peak temperature: 260°C for 10 sec
Body diode reverse recovery time: 476 ns
Thermal resistance junction-to-ambient: 65°C/W
Buy the Vishay SiHA24N80AE – Reliable Power MOSFET for Industrial Applications
Purchase the Vishay SiHA24N80AE today online for reliable high-voltage switching solutions suitable for industrial, lighting, motor drives, and solar inverters. This N-channel MOSFET offers low on-resistance, high avalanche energy rejection, and excellent thermal stability, ensuring efficient operation and durability in demanding environments. Ideal for engineers seeking high-performance power transistors, the device's RoHS compliance and halogen-free design make it an environmentally friendly choice for modern electronic applications. Secure your supply today and enhance your system reliability.
Order your Vishay SiHA24N80AE high-voltage MOSFET today and ensure robust performance in your industrial and power supply projects with dependable, efficient switching.
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