The Vishay Siliconix SiHASN80AE is an N-channel power MOSFET designed for high-current switching applications such as server power supplies, motor drives, and industrial equipment. It features a low gate charge, avalanche energy rating, integrated ESD protection, and RoHS compliance. Its high drain-source voltage of 800V and low on-resistance make it suitable for efficient, high-voltage, high-speed switching. The device is housed in a Thin-Lead TO-220 FULLPAK package, ensuring reliable performance and easy mounting for demanding power electronics and renewable energy systems.
Vishay SIHA5N80AEGE3 High-Voltage Power MOSFET Specifications:
Drain-source voltage: 800 V
Gate-source voltage: ±30 V
Continuous drain current at 100°C: 1.9 A
Pulsed drain current: 7 A
Maximum power dissipation: 29 W
Operating junction and storage temperature range: -55°C to +150°C
Maximum junction-to-ambient thermal resistance: 65 °C/W
Maximum junction-to-case thermal resistance: 43 °C/W
Drain-source on-resistance (Rds(on)): 17.5 mΩ (typ) @ 10 V
Total gate charge: 16.5 nC
Gate-source charge: 3 nC
Gate-drain charge: 6 nC
Buy the Vishay SiHASN80AE – Reliable Power MOSFET for Industrial Applications
Discover the Vishay SiHASN80AE, a high-voltage N-channel power MOSFET engineered for efficient switch mode power supplies, motor drives, and industrial systems. It offers a drain-source voltage of 800V, low on-resistance, and minimal gate charge to ensure optimal switching performance. Its advanced thermals, built-in ESD protection, RoHS compliance, and reliable package design make it ideal for demanding applications like renewable energy, induction heating, and welding. Purchase online today for durable, high-performance power control solutions that enhance system reliability and efficiency.
Get Vishay SiHASN80AE today—built for high-voltage switching and long-lasting durability in industrial and renewable energy projects.
Frequently Asked Questions
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