The Vishay Siliconix EF Series Power MOSFET is an N-channel device designed for high-efficiency switching applications. Featuring fast switching and a low figure-of-merit, it is suitable for server power supplies, motor drives, and solar inverters. With a drain-source voltage of 600V, low on-state resistance, and avalanche energy rating, it ensures reliable performance in industrial and lighting applications. Its robust thermal and electrical specifications enable effective operation under high voltages and temperatures, making it ideal for demanding power management systems.
Vishay SIHB068N60EFGE3 High-Voltage Power MOSFET Specifications:
Drain-source voltage: 600 V
Gate-source voltage: ±30 V
Continuous drain current: 26 A at 100°C
Pulsed drain current: 115 A
Maximum power dissipation: 250 W
Operating junction temperature: -55°C to +150°C
On-state resistance: 0.059 Ω typical
Gate charge: 77 nC maximum
Reverse diode forward voltage: 1.2 V
Maximum junction-to-ambient thermal resistance: 62 °C/W
Maximum junction-to-case thermal resistance: 0.5 °C/W
Soldering peak temperature: 260°C for 10 seconds
Maximum avalanche energy: 226 mJ
Drain-source voltage slope at 125°C: 70 V/μs
Buy the Buy Vishay SiHBOG8N60EF Part Number SIHB068N60EFGE3 Online
Purchase the Vishay SiHBOG8N60EF SeriesMOSFET now online and enjoy fast delivery. This high-voltage N-channel transistor offers low Rds(on), high avalanche energy rating, and excellent thermal performance. Ideal for power supplies, motor drives, solar inverters, and industrial lighting, it combines durability with efficiency. Whether you’re designing servers, industrial equipment, or lighting systems, this MOSFET provides the robust performance you need to optimize your power management. Secure your supply today for reliable, high-performance operation!
Order your Vishay SeriesSIHB068N60EF high-voltage MOSFET today and ensure reliable, efficient power switching for industrial and lighting projects.
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