The Vishay SIHB125N60EF is a high-performance N-Channel Power MOSFET featuring fast body diode, low on-resistance, and enhanced switching capabilities. It is ideal for server, telecom, and industrial power supply applications, including SMPS, PFC, lighting, motor drives, and solar inverters. With a drain-source voltage up to 600 V and continuous drain current of 16 A at 100°C, this device offers robust thermal and electrical performance, supporting high-efficiency power conversion and reliable operation under demanding conditions.
Vishay SIHB125N60EFGE3 High-Voltage Power MOSFET Specifications:
Drain-source voltage: 600 V
Gate-source voltage: ±30 V
Continuous drain current at 100°C: 16 A
Pulsed drain current: 66 A
Maximum power dissipation: 179 W
Junction-to-ambient thermal resistance: 62 °C/W
Junction-to-case thermal resistance: 0.7 °C/W
Gate charge: 47 nC
Total gate charge: 47 nC
Gate-source threshold voltage: 3.0 V to 5.0 V
Drain-source on-resistance: 0.109 Ω
Avalanche energy: 88 mJ
Operating junction temperature range: -55°C to +150°C
Peak diode recovery dv/dt: unspecified
Package: D2PAK (TO-263), lead-free and halogen-free
Buy the Vishay SIHB125N60EF – Reliable MOSFET for Industrial Applications
Purchase the Vishay SIHB125N60EF high-voltage Power MOSFET online today and experience high efficiency in your power supply and industrial applications. Designed with a drain-source voltage of 600 V and continuous drain current of 16 A at 100°C, this device ensures reliable performance and low conduction losses. Its fast body diode and low gate charge make it ideal for switching power supplies, motor drives, and solar inverters. Secure your supply chain with this robust, eco-friendly, lead-free MOSFET and enhance your project's energy efficiency and durability.
Order your Vishay Series SIHB125N60EF high-voltage MOSFET today and ensure your industrial projects benefit from dependable, efficient power switching.
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