The Vishay Siliconix SiHB12N50E is an N-channel power MOSFET designed for high-voltage switching applications. It features a low on-resistance (Rds(on)) of 0.38 Ω at 10 V gate bias, and a maximum drain-source voltage of 500 V. Suitable for power supplies, LED lighting, and industrial electronics, it offers low gate charge and reduced switching losses. Its robust construction supports pulse avalanche energy of 103 mJ, making it ideal for demanding industrial environments involving hard switching and power conversion tasks.
Operating Junction Temperature Range: -65°C to +150°C
Thermal Resistance Junction-to-Ambient: 62 °C/W
Thermal Resistance Junction-to-Case: 14 °C/W
Gate Threshold Voltage: 2.0 V to 40 V
Reverse Diode Forward Voltage: 1.2 V at 7.5 A
Reverse Recovery Time: 244 ns
Gate-Source Leakage Current: 7 μA at 30 V
Switching Time, Rise: 32 ns
Switching Time, Fall: 24 ns
Soldering Temperature (10s): 300 °C
Buy the Vishay SiHB12N50E – Reliable Power MOSFET for Industrial Applications
Enhance your electronic projects with the Vishay SiHB12N50E power MOSFET, delivering high voltage resilience, low on-resistance, and reliable switching. Designed for demanding industrial applications, this component supports power supplies, LED lighting, and switching topologies with exceptional efficiency. Its robust construction offers excellent thermal performance, pulsed avalanche energy rating, and low gate charge for reduced switching losses. Purchase online today to guarantee your systems operate with dependable, high-quality power switching solutions that meet industry standards and ensure long-term performance.
Order your Vishay series SiHB12N50E high-voltage power MOSFET today and ensure your power electronics operate with dependable efficiency and robust performance.
Frequently Asked Questions
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