The Vishay Siliconix SiHB24N65E is an N-channel power MOSFET designed for high-voltage, high-current switching applications. Featuring an ultra low gate charge, low on-resistance, and avalanche energy rated capabilities, this device excels in server and telecom power supplies, switch mode power supplies, lighting, industrial, and renewable energy systems. Its TO-263AB package offers efficient thermal conduction, making it suitable for high-temperature and high-power environments, ensuring reliable performance and low conduction losses.
Vishay SIHB24N65EGE3 High-Voltage Power MOSFET Specifications:
Drain-Source Voltage: 650 V
Gate-Source Voltage: ±30 V
Continuous Drain Current: 16 A at 100°C
Pulsed Drain Current: 70 A
Maximum Power Dissipation: 250 W
Operating Junction Temperature: -55°C to +150°C
Drain-Source On-Resistance: 0.145 Ω at 10 V Vgs
Gate Charge (Qg): 81 to 122 nC
Input Capacitance (Ciss): 2740 pF
Output Capacitance (Coss): 122 pF
Reverse Transfer Capacitance (Crss): 4 pF
Single Pulse Avalanche Energy: 508 mJ
Reverse Diode Forward Voltage: 1.2 V at 12 A
Package: TO-263AB (High Voltage)
Soldering Peak Temperature: 300°C for 10 seconds
Buy the Vishay Series Power MOSFET: SiHB24N65E
Purchase the Vishay Siliconix SiHB24N65E MOSFET online today to ensure your power switching needs are met with superior efficiency and durability. This high-voltage N-channel device offers low gate charge, minimal on-resistance, and excellent avalanche energy ratings, making it perfect for industrial, telecom, and renewable energy systems. Its TO-263AB package provides efficient heat dissipation for high-temperature environments. Investing in this device guarantees reliable operation, reduced energy loss, and long-term performance, with easy online ordering for fast delivery.
Buy Vishay SiHB24N65E now and experience unmatched reliability and performance in high-voltage switching applications.
Frequently Asked Questions
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