The Vishay Siliconix SIHB35N60EFGE3 is an N-channel MOSFET designed in the D2PAK (TO-263) package, offering high voltage handling up to 600 V and low on-resistance of 0.084 Ω at 10 V Vgs. It features fast switching capabilities with ultra low gate charge of 16 nC, making it ideal for server, telecom power supplies, LED lighting, motor drives, and renewable energy applications. The device is RoHS compliant, halogen-free, and rated for maximum junction temperatures up to 150°C, ensuring reliability in demanding environments.
Vishay SIHB35N60EFGE3 High-Voltage Power MOSFET Specifications:
Drain-source voltage Vos 600 V
Gate-source voltage Ves ±30 V
Continuous drain current at 100°C 20 A
Pulsed drain current 80 A
Power dissipation Pp 250 W
Maximum junction temperature 150°C
On-state resistance Rds(on) 0.084 Ω at 10 V Vgs
Gate charge Qg 16 nC
Avalanche energy 298 mJ
Repetitive avalanche pulse energy 298 mJ
Reverse diode forward voltage 1.2 V at 17 A
Drain-source capacitance approximately 2568 pF
Gate-source threshold voltage between 2.0 V and 4.0 V
Thermal resistance junction-to-ambient 62°C/W
Soldering temperature maximum 260°C for 10 seconds
Buy the Buy Vishay SIHB35N60EFGE3 Part Number SIHB35N60EFG online
Purchase the Vishay SIHB35N60EFGE3 online today to benefit from its high drain-source voltage of 600 V, low Rds(on), and fast switching capabilities. Perfect for power supplies, industrial equipment, motor drives, and renewable energy systems, this robust MOSFET offers high reliability and efficiency. Its low gate charge of 16 nC reduces switching losses, while the high junction temperature rating up to 150°C ensures durability in demanding environments. Flexible, RoHS compliant, and halogen-free, it’s the ideal choice for your electronic design needs.
Order your Vishay SeriesSIHB35N60EFGE3 today and ensure reliable, high-voltage switching for your power electronics projects.
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