The Vishay Siliconix SiHD4N80E is an N-channel power MOSFET designed for high-power applications such as server and telecom power supplies, switch mode power supplies, and industrial equipment. It offers low gate charge, low on-resistance, and avalanche energy rating, making it suitable for motor drives, battery chargers, renewable energy systems, and lighting. Its DPAK package ensures reliable operation with excellent thermal management and RoHS compliance, supporting efficient switching and reduced conduction losses for demanding electronic systems.
Vishay SIHD4N80EGE3 High Power N-Channel MOSFET Specifications:
Drain-source voltage: 800 V
Gate-source voltage: ±30 V
Continuous drain current at 25°C: 27 A
Pulsed drain current: 4 A
Maximum power dissipation: 69 W
Operating temperature range: -55°C to +150°C
RθJA (junction-to-ambient): 62°C/W
RθJC (junction-to-case): 18°C/W
Drain-source on-resistance: 11 mΩ at Vgs = 10 V, Id = 2 A
Gate charge: 32 nC
Avalanche energy: 56 mJ
Soldering temperature: 300°C for 10 sec
Package: DPAK (TO-252), RoHS and halogen-free
Buy the Buy Vishay Siliconix SiHD4N80E Part Number SIHD4N80EGE3 Online
Order the Vishay Siliconix SiHD4N80E N-channel power MOSFET online today and enhance your power electronics. Its high voltage rating of 800V, low gate charge, and excellent thermal properties make it ideal for demanding applications like power supplies, motor drives, and renewable energy systems. With a robust avalanche energy rating and a DPAK package for reliable thermal management, this MOSFET ensures efficient switching, reduced losses, and long-term durability. Purchase now for optimal performance and seamless integration into your high-power electronic designs.
Get Vishay Siliconix SiHD4N80E today—built for high-current switching and long-lasting durability.
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