The SiHGO68N60EF is a high-performance N-channel power MOSFET featuring a fast body diode, designed for server, telecom, industrial, and lighting applications. It offers low Rds(on), reduced switching losses, and high avalanche energy rating, making it suitable for switch mode power supplies, motor drives, battery chargers, and PV inverters. With a drain-source voltage of 600 V, continuous drain current up to 26 A, and low gate charge, this MOSFET ensures dependable operation with excellent thermal stability and efficiency in high-current, high-voltage applications.
Vishay SIHG068N60EFGE3 Power MOSFET Specifications:
Drain-source voltage Vos 600 V
Gate-source voltage Ves ±30 V
Continuous drain current 26 A at 100°C
Maximum power dissipation 250 W
Operating junction temperature range -55°C to +150°C
Switching times: Rise time 83 ns, Fall time 70 ns
Gate charge 77 nC
Drain-source on-resistance 0.059 Ω
Package TO-247AC, RoHS compliant, halogen-free
Maximum junction-to-ambient RθJA 40 K/W
Avalanche energy 226 mJ
Soldering peak temperature 260°C for 10 seconds
Buy the Buy Vishay MOSFET Part Number SIHG068N60EFGE3 Online
Discover the Vishay SiHGO68N60EF MOSFET for reliable high-voltage switching in industrial, telecom, and lighting systems. Featuring low Rds(on), fast switching times, and robust energy ratings, this N-channel MOSFET ensures efficient power management and thermal stability. Ideal for switch mode power supplies, motor drives, and solar inverters, it offers a maximum drain-source voltage of 600 V and continuous drain current of 26 A. Purchase online now to benefit from Vishay's quality and support high-performance electronic designs.
Order your Vishay SeriesSIHG068N60EFGE3 high-voltage power MOSFET today and enhance your power electronics with dependable, efficient switching performance.
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