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Vishay SIHG11N80EGE3 High-Voltage Power MOSFET

The Vishay Siliconix SiHG11N80E is a high-performance N-channel Power MOSFET designed for efficient switching in industrial applications. It features a low figure-of-merit Ron x Qg, ultra-low gate charge, and reduced switching and conduction losses, making it ideal for server and telecom power supplies, LED lighting, motor drives, and renewable energy systems. The device is avalanche energy rated, operates at voltages up to 800V, and ensures reliable performance with RoHS compliance and halogen-free construction. Suitable for high-voltage, high-current, and fast-switching power management scenarios, this MOSFET offers excellent thermal characteristics and durability.

Authorized Distributors
Source:DigiKey
Part No:SIHG11N80E-GE3
Stock:0
Inv Date:06-09-2026
Price: Unit price: $2.26996
Buy/RFQ:
Part No:SIHG11N80E-GE3
Stock:450
Inv Date:06-10-2026
Price: Unit price: $6.92
Buy/RFQ:

Vishay SIHG11N80EGE3 High-Voltage Power MOSFET Specifications:

  • Drain-source voltage Vos: 800 V
  • Gate-source voltage Ves: ±30 V
  • Continuous drain current at 25°C: 12 A
  • Pulsed drain current: 32 A
  • Maximum power dissipation: 179 W
  • Operating temperature range: -55 to +150°C
  • Thermal resistance junction-to-ambient: 62°C/W
  • Thermal resistance junction-to-case: 0.7°C/W
  • Maximum junction temperature: +150°C
  • Drain-source on-resistance: 0.38 Ω (Typ.) at Vgs=10 V and Id=5.5A
  • Total gate charge: 88 nC
  • Gate charge Qgs: 9 nC
  • Gate-drain charge Qhas: 16 nC
  • Body diode continuous current: 12 A
  • Body diode forward voltage: 1.2 V
  • Repetitive avalanche energy: 226 mJ
  • Peak diode reverse recovery dV/dt: 43 V/μs
  • Peak diode reverse recovery charge: 84 μC
  • Soldering peak temperature: 300°C for 10 seconds
  • Maximum junction-to-case thermal resistance: 0.7°C/W
  • Maximum junction-to-ambient thermal resistance: 62°C/W

Buy the Vishay SiHG11N80E – Reliable Power MOSFET for Industrial Applications

Purchase the Vishay SiHG11N80E online today to secure a high-performance N-channel Power MOSFET optimized for industrial and power supply applications. Featuring a low gate charge, high voltage rating up to 800V, and excellent thermal management, this MOSFET ensures reliable switching performance with reduced losses. Ideal for server power supplies, motor drives, and renewable energy systems, it complies with RoHS standards and offers long-lasting durability. Order now for fast delivery and elevate your power circuitry with top-quality components designed for demanding applications.

Buy Vishay SiHG11N80E now and experience unmatched reliability and high efficiency in your power management systems.

Frequently Asked Questions

Where can I buy Vishay SIHG11N80EGE3?

You can click on the BUY or RFQ button to purchase SIHG11N80EGE3 from an authorized Vishay distributor.

How do I troubleshoot issues or seek technical support for part SIHG11N80EGE3?

You can download the SIHG11N80EGE3 datasheet or visit the Vishay website for support.

Who is the manufacturer of SIHG11N80EGE3?

Vishay

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