The Vishay Siliconix SiHG180N60E-GE3 is a high-performance N-channel power MOSFET designed for various industrial, telecom, and power supply applications. It features a 600 V drain-source voltage, low on-resistance, and high pulsed current capacity. This TO-247AC package MOSFET is ideal for switch mode power supplies, server and telecom power systems, lighting, welding, motor drives, battery chargers, and PV inverters. Its low gate charge and avalanche energy rating facilitate efficient switching performance and reduced losses, ensuring reliable operation in demanding environments.
Vishay SIHG180N60EGE3 Power MOSFET Specifications:
Drain-source voltage: 600 V
Gate-source voltage: +30 V
Continuous drain current at 25°C: 12 A
Pulsed drain current: 44 A
Maximum power dissipation: 156 W
Operating junction temperature range: -55°C to +150°C
On-state resistance: 0.155 Ω (typical)
Gate charge: 7 nC (at 10 V)
Gate threshold voltage: 3.0 V to 50 V
Drain-source breakdown voltage: 600 V
Avalanche energy: 11 mJ
Maximum junction-to-case thermal resistance: 0.8°C/W
Peak diode recovery dv/dt: 22 V/ns
Soldering temperature: 260°C for 10s
RoHS and halogen-free compliant
Buy the Vishay Series E Power MOSFET: SiHG180N60E
Order the Vishay SiHG180N60E POWER MOSFET online today and take advantage of its high voltage rating, low on-resistance, and robust performance. Perfect for switch mode power supplies, lighting, motor drives, and solar inverters, this TO-247AC package ensures efficient operation in demanding environments. Its low gate charge reduces switching losses, while the avalanche rated feature guarantees safety under transient conditions. Purchase now for fast delivery and enhance your electronic project with reliable and efficient power switching components.
Buy Vishay SiHG180N60E MOSFET now and experience unmatched reliability and power efficiency for industrial and power supply applications.
Frequently Asked Questions
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