The Vishay Siliconix SIHG70N60AEF-GE3 is an N-channel power MOSFET in a TO-247AC package, designed for high-current and high-voltage applications. It features a fast body diode, low on-resistance, and is suitable for telecom, lighting, industrial, renewable energy, and switch mode power supplies. Rated for a drain-source voltage of 600V, it offers low gate charge, avalanche energy capability, and enhanced thermal performance, ensuring efficient and reliable operation in demanding electronic systems.
Vishay SIHG70N60AEFGE3 High-Voltage Power MOSFET Specifications:
Drain-source voltage: 600 V
Gate-source voltage: ±20 V
Continuous drain current: not specified, but capable of high current
Pulsed drain current: 173 A
Maximum power dissipation: not specified
Drain-source on-resistance: 0.0355 Ω typical at 10 V
Gate charge: 410 nC total
Avalanche energy rating: 1019 mJ
Operating junction temperature range: -55 to +150 °C
Thermal resistance junction-to-ambient: maximum 40 °C/W
Body diode reverse recovery time: 368 ns
Soldering temperature: 300 °C for 10 seconds
ON-resistance varies with temperature, normalized resistance increases with rising junction temperature
Buy the Buy Vishay SIHG70N60AEF-GE3 Part Number SIHG70N60AEF-GE3 Online
Order the Vishay SIHG70N60AEF-GE3 power MOSFET online today to ensure your projects benefit from high voltage handling, low on-resistance, and robust thermal performance. This N-channel device is ideal for industrial, renewable energy, and telecom applications, offering fast switching, excellent avalanche energy rating, and a durable TO-247AC package. With quick and secure online purchasing, you can seamlessly integrate this reliable component into your power supply systems, ensuring efficient operation and long-term durability in demanding electronic environments.
Get Vishay SIHG70N60AEF-GE3 today—built for high voltage, low on-resistance, and reliable power switching in demanding applications.
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