The Vishay Siliconix SiHP11N80AE is a high-performance N-channel power MOSFET optimized for server and telecom power supplies, switch mode power supplies, and industrial applications. It features a low figure-of-merit (Ron x Qg), ultra-low gate charge, and integrated ESD protection, enabling reduced switching and conduction losses. With a drain-source voltage of 800V, continuous drain current of 5A at 150°C, and avalanche energy rating of 88mJ, it offers robust performance for induction heating, motor drives, and renewable energy systems. Its TO-220AB package ensures reliable mounting and thermal management.
Vishay SIHP11N80AEGE3 Power MOSFET Specifications:
Drain-source Voltage: 800 V
Gate-source Voltage: +30 V
Continuous Drain Current: 5 A at 150°C
Pulsed Drain Current: 22 A
Power Dissipation: 78 W
Avalanche Energy: 88 mJ
Maximum Operating Junction Temperature: -55°C to +150°C
Soldering Temperature: 260°C for 10 seconds
Thermal Resistance Junction-to-Ambient: 62 °C/W
Maximum Junction Temperature: 150°C
Gate Charge (Total): 42 nC
Drain-Source Resistance: 0.391 Ω (at Vgs=10V)
Buy the Vishay SiHP11N80AE – Reliable Power MOSFET for Industrial Applications
Purchase the Vishay SiHP11N80AE online today to enhance your power management systems. This high-voltage N-channel MOSFET offers low gate charge, robust voltage and current ratings, and excellent thermal performance, making it ideal for server, telecom, and industrial applications. With its integrated ESD protection and efficient switching capabilities, buying online ensures quick delivery and reliable quality for your engineering projects or manufacturing needs. Upgrade your power solutions today with this proven, high-performance MOSFET.
Buy Vishay SiHP11N80AE now and experience unmatched reliability and performance in high-voltage power switching and industrial systems.
Frequently Asked Questions
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