The Vishay Siliconix SiHS90N65E is a high-voltage N-channel MOSFET designed for industrial power applications, including server and telecom power supplies, switch mode power supplies, and PFC circuits. It features low Rds(on), low gate charge, and high avalanche energy rating, enabling reduced switching and conduction losses for efficient energy management. Its high voltage capacity of 650V and continuous drain current of 55A at 100°C make it suitable for robust industrial environments. The device offers excellent thermal stability, with a maximum junction temperature of 150°C, and complies with RoHS standards for environmentally friendly manufacturing.
Vishay SIHS90N65EGE3 High-Voltage Power MOSFET Specifications:
Drain-source voltage: 650 V
Gate-source voltage: ±30 V
Continuous drain current: 55 A at 100°C
Pulsed drain current: 323 A
Maximum power dissipation: 625 W
Junction temperature range: -55°C to +150°C
Maximum avalanche energy: 1930 mJ
Maximum junction-to-ambient thermal resistance: 40 °C/W
Gate threshold voltage: 2.0 to 4.0 V
On-state resistance (Rds(on)): 0.025 to 0.029 Ω
Gate charge: Max. 591 nC
Package: TO-274AA (High Voltage)
Buy the Vishay SiHS90N65E – Reliable High-Voltage Power MOSFET for Industrial Applications
Purchase the Vishay Siliconix SiHS90N65E online today and ensure robust performance in your industrial power systems. With a voltage rating of 650V and a continuous drain current of 55A at 100°C, this MOSFET offers low Rds(on), low gate charge, and excellent thermal stability, making it ideal for server, telecom, and switch mode power supplies. Its high avalanche energy capacity further improves efficiency by reducing switching losses. Buy online now to secure this dependable, RoHS-compliant device for your high-voltage applications and improve your energy management systems efficiently.
Order your Vishay Series SiHS90N65E today and enhance your industrial power projects with this reliable high-voltage MOSFET designed for efficiency and durability.
Frequently Asked Questions
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