The Vishay Siliconix SiHU4N80E is an N-channel power MOSFET designed for high-current, high-voltage applications such as power supplies, motor drives, and renewable energy systems. It features low on-resistance, ultra low gate charge, and avalanche energy rating, making it suitable for efficient switching with reduced losses. Its robust thermal characteristics support operation up to 150°C, and it complies with RoHS standards. This high-performance MOSFET provides reliable operation in demanding industrial and electronic applications, ensuring durability and energy efficiency across various operating conditions.
Drain-source on-resistance: 127 mΩ (typ.) at 10 V and 2 A
Avalanche energy: 56 mJ
Operating junction and storage temperature: -55°C to +150°C
Thermal resistance junction-to-ambient: Max 62°C/W
Gate charge: 16 nC (total), 6 nC (gate-drain)
Body diode forward voltage: 1.2 V at 2 A
Repetitive avalanche energy: 56 mJ
Peak diode recovery dV/dt: 44 V/μs
Soldering temperature (peak): 300°C for 10 seconds
Buy the Buy Vishay SiHU4N80E Power MOSFET Part Number SIHU4N80E online
Purchase the Vishay SiHU4N80E MOSFET online to benefit from its high-voltage capacity, low on-resistance, and excellent switching efficiency. Designed for demanding applications like power supplies, motor drives, and renewable energy systems, this MOSFET guarantees durability, energy savings, and high performance. Its low gate charge reduces switching losses, while the robust thermal and electrical ratings provide reliable operation up to 150°C. Order now to enhance your project's energy efficiency and operational reliability with a trusted industrial-grade component.
Order your Vishay SiHU4N80E power MOSFET today and ensure reliable high-voltage switching for your industrial and electronic applications.
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