The Vishay Siliconix SiHW21N80AE is a high-performance N-Channel Power MOSFET designed for switching applications in server, telecom, industrial, and solar power systems. With a maximum drain-source voltage of 800 V and low on-resistance, this device offers excellent efficiency for power supplies, motor drives, and induction heating. It features low gate charge, high avalanche energy rating, and a robust TO-247AD package for easy mounting and heat dissipation. Suitable for high-frequency switching, it ensures reliable operation under demanding conditions, reducing losses and improving system performance.
Maximum junction-to-case resistance RθJC: 0.7 °C/W
Avalanche current: 38 A
Reverse diode forward voltage: 1.2 V
Buy the Vishay Series Power MOSFET: SiHW21N80AEG3
Purchase the Vishay SiHW21N80AEG3 online today to ensure your power systems operate with high efficiency and dependability. This MOSFET offers 800 V drain-source voltage, low Rds(on), and excellent avalanche energy rating, making it ideal for server, telecom, industrial, and solar inverters. Its robust construction and low gate charge simplify drive circuitry while reducing switching losses. Enjoy fast delivery, competitive pricing, and trusted quality. Optimize your application performance by ordering this high-voltage, reliable MOSFET online now and ensure your systems meet demanding operational standards with ease.
Buy Vishay SiHW21N80AEG3 now and experience unmatched reliability and high-voltage performance for demanding power applications.
Frequently Asked Questions
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You can click on the BUY or RFQ button to purchase SIHW21N80AEGE3 from an authorized Vishay distributor.
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