The Vishay SiJA22DP is a high-performance N-channel MOSFET housed in PowerPAK SO-8L package. Tuned for low Rps-Qoss FOM, it supports high current load switching, hot-swap, and DC/DC applications. With a drain-source voltage of 25 V and continuous drain current of 7.2 A at 25°C, it features low gate charge, low on-resistance, and is RoHS compliant. Designed for reliable switching, it includes thermal resistance ratings and is suitable for power management and load switching in advanced electronic systems, ensuring efficiency and durability.
Vishay SIJA22DPT1GE3 High Power MOSFET Specifications:
Drain-source voltage: 25 V
Gate-source voltage: +20 V / -16 V
Continuous drain current: 7.2 A at 25°C
Pulsed drain current: 160 A
Maximum power dissipation: 48 W
Thermal resistance junction-to-ambient: 22 °C/W
On-state drain resistance: 0.00074 Ω at Vgs = 10 V
Gate charge: 30 nC
Body diode forward voltage: 0.74 V at 10 A
Operating junction temperature: -55°C to +150°C
Soldering peak temperature: 260°C
Package: PowerPAK SO-8L, lead (Pb)-free, halogen-free
Buy the VISHAY Series PowerPAK SO-8L MOSFET: SIJA22DP
Get the Vishay PowerPAK SO-8L SiJA22DP MOSFET online now for high-efficiency switching in load and power management circuits. Featuring 25 V drain-source voltage, 7.2 A continuous drain current, ultra-low on-resistance, and excellent thermal performance, this lead-free MOSFET provides reliable operation in demanding electronic applications. Its compact PowerPAK package ensures high power density, making it ideal for DC/DC converters, hot-swap, and load switcher designs. Purchase now to upgrade your electronic systems with durable, high-performance components from Vishay.
Order your Vishay PowerPAK SO-8L MOSFET SiJA22DP today and enhance your power switching capabilities with reliable, low on-resistance components.
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