The Vishay Siliconix N-Channel MOSFET SIRA84BDP is a PowerPAK SO-8 package device designed for high power density DC/DC applications, synchronous rectification, and voltage regulator modules. It features trenchFET technology, a drain-source voltage rating of 30 V, low on-state resistance, and high continuous drain current. The device offers robust thermal and electrical characteristics, including maximum power dissipation of 2.4 W at 70°C, and can operate comfortably within a temperature range from -55°C to +150°C. Its leadless package ensures reliable, compact installation in dense circuit designs, making it ideal for modern power circuits needing efficient switching and low conduction losses.
Vishay SIRA84BDPT1GE3 N-Channel Power MOSFET Specifications:
Drain-source voltage: 30 V
Gate-source voltage: +20 V, -16 V
Continuous drain current at 25°C: 22 A
Continuous drain current at 70°C: 18 A
Pulsed drain current: 33 A
Maximum power dissipation: 2.4 W at 70°C
Operating temperature range: -55 to +150°C
Thermal resistance junction-to-ambient: Max 34 °C/W
Thermal resistance junction-to-case: Max 3.5 °C/W
Gate charge: 16-706 nC
Drain-source breakdown voltage: 30 V
Gate-source threshold voltage: 1.2 V (typ.)
Package: PowerPAK SO-8
RoHS compliant and halogen-free
Buy the Vishay Series PowerPAK SO-8 N-Channel MOSFET: SIRA84BDP
Purchase the Vishay PowerPAK SO-8 N-Channel MOSFET SIRA84BDP online today and enhance your power circuits with high efficiency, low Rds(on), and robust thermal performance. This device is ideal for applications like DC/DC converters, voltage regulators, and synchronous rectification, providing high current capacity and excellent thermal management in a compact leadless package. Ensure your electronic designs are optimized for performance and reliability by ordering this high-quality MOSFET directly from trusted online suppliers who guarantee fast, secure delivery.
Order your Vishay Series PowerPAK SO-8 MOSFET SIRA84BDP today and optimize your power management with reliable, low-loss switching components.
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