myMectronic
myMectronic

A Premier B2B Part Search

Vishay SIS407DNT1GE3 PowerMOSFET

The SiS407DN is a P-Channel 20 V MOSFET featuring a compact PowerPAK 1212-8 package, low on-resistance, and RoHS compliance. It offers a drain-source voltage of 20 V, continuous drain current up to 15.4 A at 25°C, and rapid switching capabilities with low gate charge. Its small footprint and efficient thermal performance make it ideal for load switching and battery applications. The device’s high avalanche energy and robust ratings ensure reliable operation in demanding electronic circuits, with specifications optimized for modern power management solutions.

Authorized Distributors
Source:Newark
Part No:SIS407DN-T1-GE3
Stock:2900
Inv Date:06-09-2026
Price: Unit price: $1.38
Buy/RFQ:
Source:DigiKey
Part No:SIS407DN-T1-GE3
Stock:30221
Inv Date:06-09-2026
Price: Unit price: $1.64
Buy/RFQ:
Part No:SIS407DN-T1-GE3
Stock:25252
Inv Date:06-10-2026
Price: Unit price: $1.64
Buy/RFQ:
Part No:SIS407DN-T1-GE3
Stock:0
Inv Date:06-09-2026
Price: Unit price: $0.8
Buy/RFQ:
Part No:SIS407DN-T1-GE3
Stock:0
Inv Date:06-09-2026
Price: Unit price: $0.79
Buy/RFQ:
Part No:SIS407DN-T1-GE3
Stock:6000
Inv Date:06-10-2026
Price: N/A
Buy/RFQ:

Vishay SIS407DNT1GE3 PowerMOSFET Specifications:

  • Drain-Source Voltage: 20 V
  • Gate-Source Voltage: ±8 V
  • Continuous Drain Current: 15.4 A at 25°C, 12.38 A at 70°C
  • Pulsed Drain Current: 40 A
  • Maximum Power Dissipation: 3.6 W at 25°C, 2.3 W at 70°C
  • Avalanche Energy: 20 mJ
  • Operating Junction Temperature Range: -55°C to +150°C
  • Maximum Junction-to-Ambient Resistance: 28°C/W, 35°C/W max
  • Drain-Source Breakdown Voltage: 20 V
  • Gate Threshold Voltage: -0.4 V to -4 V
  • Gate Leakage: 100 nA at Vos = 0 V, Vgs = 8 V
  • Body Diode Voltage: -0.82 V at 10 A
  • Input Capacitance: 2760 pF
  • On-Resistance: 0.0115 to 0.0195 Ω
  • Gate Charge: 62.5 to 38 nC
  • Rise Time: 28 to 42 ns
  • Fall Time: 38 to 57 ns
  • Body Diode Reverse Recovery Charge: 50 to 75 nc

Buy the Vishay Series PowerPAK 1212-8 P-Channel 20 V MOSFET: SIS407DN

Order the Vishay SIS407DN P-Channel 20 V MOSFET online today and benefit from its small footprint, low on-resistance, and excellent thermal performance. This device is ideal for efficient load switching and battery management in compact electronic circuits, offering high avalanche energy and reliability. Its RoHS-compliant design ensures environmentally friendly manufacturing. With quick switching capabilities and robust ratings, the SIS407DN can handle demanding power applications, delivering consistent performance in a variety of electronic and industrial systems. Buy now for superior efficiency and durability.

Buy Vishay SIS407DN now and experience unmatched reliability and performance in power management and load switching applications.

Frequently Asked Questions

Where can I buy Vishay SIS407DNT1GE3?

You can click on the BUY or RFQ button to purchase SIS407DNT1GE3 from an authorized Vishay distributor.

How do I troubleshoot issues or seek technical support for part SIS407DNT1GE3?

You can download the SIS407DNT1GE3 datasheet or visit the Vishay website for support.

Who is the manufacturer of SIS407DNT1GE3?

Vishay

Vishay Part List

Browse and search other Vishay parts, locate datasheets and stock

Sponsored by