The SiS407DN is a P-Channel 20 V MOSFET featuring a compact PowerPAK 1212-8 package, low on-resistance, and RoHS compliance. It offers a drain-source voltage of 20 V, continuous drain current up to 15.4 A at 25°C, and rapid switching capabilities with low gate charge. Its small footprint and efficient thermal performance make it ideal for load switching and battery applications. The device’s high avalanche energy and robust ratings ensure reliable operation in demanding electronic circuits, with specifications optimized for modern power management solutions.
Continuous Drain Current: 15.4 A at 25°C, 12.38 A at 70°C
Pulsed Drain Current: 40 A
Maximum Power Dissipation: 3.6 W at 25°C, 2.3 W at 70°C
Avalanche Energy: 20 mJ
Operating Junction Temperature Range: -55°C to +150°C
Maximum Junction-to-Ambient Resistance: 28°C/W, 35°C/W max
Drain-Source Breakdown Voltage: 20 V
Gate Threshold Voltage: -0.4 V to -4 V
Gate Leakage: 100 nA at Vos = 0 V, Vgs = 8 V
Body Diode Voltage: -0.82 V at 10 A
Input Capacitance: 2760 pF
On-Resistance: 0.0115 to 0.0195 Ω
Gate Charge: 62.5 to 38 nC
Rise Time: 28 to 42 ns
Fall Time: 38 to 57 ns
Body Diode Reverse Recovery Charge: 50 to 75 nc
Buy the Vishay Series PowerPAK 1212-8 P-Channel 20 V MOSFET: SIS407DN
Order the Vishay SIS407DN P-Channel 20 V MOSFET online today and benefit from its small footprint, low on-resistance, and excellent thermal performance. This device is ideal for efficient load switching and battery management in compact electronic circuits, offering high avalanche energy and reliability. Its RoHS-compliant design ensures environmentally friendly manufacturing. With quick switching capabilities and robust ratings, the SIS407DN can handle demanding power applications, delivering consistent performance in a variety of electronic and industrial systems. Buy now for superior efficiency and durability.
Buy Vishay SIS407DN now and experience unmatched reliability and performance in power management and load switching applications.
Frequently Asked Questions
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