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Vishay SIS892ADNT1GE3 PowerMOSFET

The SiS892ADN is a N-channel power MOSFET with a 100V drain-source voltage rating, 26.8 mΩ Rds(on) at 7.5V, capable of handling up to 22.8A continuous drain current. It features a PowerPAK 1212-8 package that offers excellent thermal performance, small size, and efficient current handling. Suitable for primary side switching, synchronous rectification, and industrial applications, it boasts a low gate charge of about 97 nC, low gate leakage, and high avalanche energy. Designed for reliable performance in demanding electronic switching environments.

Authorized Distributors
Source:Newark
Part No:SIS892ADN-T1-GE3
Stock:17101
Inv Date:06-09-2026
Price: Unit price: $1.89
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Source:DigiKey
Part No:SIS892ADN-T1-GE3
Stock:24240
Inv Date:06-09-2026
Price: Unit price: $1.72
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Part No:SIS892ADN-T1-GE3
Stock:36386
Inv Date:06-10-2026
Price: Unit price: $1.72
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Part No:SIS892ADN-T1-GE3
Stock:0
Inv Date:06-09-2026
Price: Unit price: $0.795
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Source:Arrow EU
Part No:SIS892ADN-T1-GE3
Stock:12000
Inv Date:06-10-2026
Price: N/A
Buy/RFQ:
Part No:SIS892ADN-T1-GE3
Stock:1708
Inv Date:06-10-2026
Price: N/A
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Vishay SIS892ADNT1GE3 PowerMOSFET Specifications:

  • Drain-Source Voltage: 100 V
  • Gate-Source Voltage: ±20 V
  • Maximum Power Dissipation: 33 W
  • Continuous Drain Current: 22.8 A at 25°C
  • Pulsed Drain Current: 40 A
  • Drain-Source On-State Resistance: 0.036 - 0.047 Ω (at specific Vgs and Id)
  • Gate Charge (Qg): 97 - 95 nC
  • Body Diode Forward Voltage: 0.8 - 1.2 V
  • Maximum Junction Temperature: -55 to 150 °C
  • Thermal Resistance Junction-to-Ambient: 28 - 34 °C/W
  • Thermal Resistance Junction-to-Case: 2.0 - 24 °C/W
  • Operating Junction Temperature: -55 to 150 °C
  • Soldering: Peak temperature 260°C
  • Package: PowerPAK 1212-8 low-profile, surface-mount package
  • Switching Time Delay: On 10-20 ms, Off 16-32 ms
  • Maximum Avalanche Energy: 5 mJ

Buy the Vishay Siliconix Series PowerMOSFET: SiS892ADN

Purchase the Vishay Siliconix SiS892ADN power MOSFET online today and unlock superior thermal performance, low Rds(on), and high current handling capabilities. This N-channel MOSFET is ideal for industrial, telecom, and power switching applications, offering a compact PowerPAK 1212-8 package that minimizes thermal rise and enhances efficiency. With low gate charge and high avalanche energy, it ensures dependable operation under demanding conditions. Order now for fast delivery and improve your electronic designs with proven Vishay quality.

Buy Vishay Siliconix SiS892ADN now and experience unmatched reliability and performance in high-current switching applications.

Frequently Asked Questions

Where can I buy Vishay SIS892ADNT1GE3?

You can click on the BUY or RFQ button to purchase SIS892ADNT1GE3 from an authorized Vishay distributor.

How do I troubleshoot issues or seek technical support for part SIS892ADNT1GE3?

You can download the SIS892ADNT1GE3 datasheet or visit the Vishay website for support.

Who is the manufacturer of SIS892ADNT1GE3?

Vishay

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