The N-Channel MOSFET is a high-performance device designed for efficient switching and power management in various electronic applications. It features a low on-resistance of 0.01580Ω at Vgs = 4.5V, a maximum drain-source voltage of 40V, and supports continuous drain currents up to 11485A at 25°C. Ideal for synchronous rectification, DC/DC converters, motor drive switches, and load control, it has a compact PowerPAK 1212-8 package that offers excellent thermal characteristics and space-saving advantages while maintaining high reliability and low energy loss.
Thermal Resistance Junction-to-Ambient: 38°C/W typical, 48°C/W maximum
Thermal Resistance Junction-to-Case: 43°C/W typical, 54°C/W maximum
Gate Threshold Voltage: 1.4 V to 2.2 V
On-State Resistance: 0.01580Ω typical at Vgs = 4.5V
Single Pulse Avalanche Energy: 6 mJ
Body Diode Forward Voltage: 0.8 to 1.2 V at 5A
Operating Junction and Storage Temperature: -55°C to +150°C
Soldering Temperature: Peak 260°C
Buy the Vishay SISB46DNT1GE3 – Reliable MOSFET for Industrial Applications
Upgrade your electronic projects with Vishay’s SISB46DNT1GE3 high-current N-channel MOSFET, designed for superior switching performance and thermal efficiency. Its compact PowerPAK 1212-8 package provides excellent heat dissipation and space-saving benefits, ideal for applications like DC/DC converters, motor drives, and load switches. With low on-resistance and high current capacity, this device ensures low energy losses and enhanced reliability. Purchase online now to integrate reliable, high-performance power components into your industrial or consumer electronic designs.
Order your Vishay Series SISB46DNT1GE3 high-current MOSFET today and ensure your power management projects operate with dependable efficiency.
Frequently Asked Questions
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