This N-Channel 30V MOSFET with integrated Schottky diode is optimized for high-frequency switching and synchronous rectification applications. Featuring a PowerPAK 1212-8S package, it provides low Rds(on), high current handling up to 178.3A, and robust thermal performance suitable for DC/DC conversions, buck converters, and power management circuits. Its monolithic Schottky diode and advanced trench technology enable higher efficiency and reliability in demanding electronic systems. Suitable for engineers seeking a compact, high-performance power switch solution with RoHS compliance.
Vishay SISS66DNT1GE3 High Power MOSFET Specifications:
Drain-source voltage: 30 V
Gate-source voltage: +20/-16 V
Continuous drain current at 25°C: 178.3 A
Pulsed drain current: 200 A
Maximum power dissipation: 3.2 W at 70°C
Operating temperature range: -55 to +150°C
Gate threshold voltage: 1 V to 3 V
On-state resistance: 0.00138 Ω at Vgs = 10 V, 0.00219 Ω at Vgs = 4.5 V
Body diode forward voltage: 0.45 V at 10 A
Reverse recovery time: 47 ns
Thermal resistance junction-to-ambient: 25°C/W
Package: PowerPAK 1212-8S
Buy the Buy Vishay MOSFET Part Number SISS66DNT1GE3 Online
Enhance your electronic designs with the Vishay SISS66DNT1GE3 high power MOSFET, featuring low Rds(on), high current capacity, and integrated Schottky diode. Its PowerPAK 1212-8S package ensures excellent thermal performance and compact form factor ideal for DC/DC converters, synchronous rectification, and high-frequency switching applications. Designed for reliability and efficiency, this device supports demanding power management requirements. Available for quick online purchase, it guarantees optimal performance for your next innovative project, ensuring simplified integration and long-term durability in your electronic systems.
Buy Vishay SISS66DNT1GE3 now and experience unmatched reliability and high switching efficiency for power management circuits.
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