The Vishay Siliconix SiZ350DT is a dual N-channel MOSFET designed for high-frequency switching, synchronous buck converters, and DC/DC applications. Featuring a trenchFET® Gen IV architecture, it offers low Rds(on), high current capacity, and robust thermal performance. The device includes high side and low side MOSFETs within a compact PowerPAIR® 3 x 3 package, suitable for power management and efficient switching circuits. Its electrical characteristics include a drain-source voltage of 30 V, low gate charge of 63 nC, and optimized Rds(on) for high-efficiency operation at elevated temperatures, ensuring reliable performance in demanding electronic systems.
On-state resistance Ros(on): 0.00675 Ω at Ves = 10 V
Gate charge Qg: 63 nC
Threshold voltage Ves: 1 V to 24 V
Body diode forward voltage Vsp: 1.2 V at Is = 14.8 A
Reverse recovery time: 45 ns
Operating junction temperature range: -55°C to +160°C
Soldering peak temperature: 260°C
Buy the Buy Vishay SiZ350DT Part Number SIZ350DTT1GE3 Online
Purchase the Vishay Siliconix SiZ350DT dual N-channel MOSFET online now and benefit from its high efficiency, low Rds(on), and excellent thermal performance. Perfect for DC/DC converters, synchronous buck circuits, and power management applications, this compact device delivers reliable operation at 30 V maximum drain-source voltage, with low gate charge and high current capacity. Secure fast delivery and quality assurance by ordering today and upgrade your electronic systems with this industry-leading power MOSFET.
Order your Vishay SiZ350DT high-current dual MOSFET today and enhance your power switching circuits with this reliable, high-performance component.
Frequently Asked Questions
Where can I buy Vishay SIZ350DTT1GE3?
You can click on the BUY or RFQ button to purchase SIZ350DTT1GE3 from an authorized Vishay distributor.
How do I troubleshoot issues or seek technical support for part SIZ350DTT1GE3?