Vishay SIZF360DTT1GE3 High Power Dual N-Channel MOSFET
The Vishay Siliconix SIZF360DTT1GE3 is a dual N-channel MOSFET with a 30 V voltage rating, ideal for power management in synchronous buck converters, telecom, and computing applications. It features TrenchFET® Gen IV technology with low on-resistance and Schottky diode integration, supporting high current and efficient thermal transfer. Its compact PowerPAIR 3 x 3FDC package enhances thermal performance and simplifies mounting. Designed for high-efficiency switching, it offers reliable performance under demanding conditions, with robust electrical and thermal characteristics suitable for advanced power systems.
Thermal resistance junction-to-ambient: max 33°C/W (Ch-1), 29°C/W (Ch-2)
Package: PowerPAIR 3 x 3FDC, lead-free, halogen-free
Soldering temperature: peak 260°C
Body diode reverse recovery charge Qn: 40-80 nC
Maximum junction-to-case temperature: 150°C
Buy the Buy Vishay Siliconix Dual N-Channel MOSFET Part Number SIZF360DTT1GE3 Online
Order the Vishay Siliconix SIZF360DTT1GE3 online today to access a dual N-channel MOSFET with 30 V voltage rating, low Rds(on), and high current capacity. Its PowerPAIR 3 x 3FDC package ensures excellent thermal performance and compact design, ideal for demanding power management in telecom, computing, and power conversion applications. Enjoy fast, reliable delivery, competitive pricing, and support for your high-efficiency, high-current applications with this advanced power MOSFET.
Buy Vishay Siliconix SIZF360DTT1GE3 now and experience unmatched reliability, high current capacity, and efficient power switching performance.
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